stW15NB50 sth15nb50fi n-channel 500v - 0.33 w - 14.6a - t0-247/isowatt218 powermesh ? mosfet n typical r ds(on) = 0.33 w n extremely high dv/dt capability n 30v gate to source voltage rating n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? process, sgs-thomson has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the company's proprietary edge termination structure, gives the lowest rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive ? internal schematic diagram absolute maximum ratings symbol parameter value unit stW15NB50 sth15nb50fi v ds drain-source voltage (v gs =0) 500 v v dgr drain- gate voltage (r gs =20k w ) 500 v v gs gate-source voltage 30 v i d drain current (continuous) at t c =25 o c 14.6 10.5 a i d drain current (continuous) at t c =100 o c9.26.6a i dm ( ? ) drain current (pulsed) 58.4 58.4 a p tot total dissipation at t c =25 o c19080w derating factor 0.64 1.52 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4 v/ns v iso insulation withstand voltage (dc) 4000 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c type v dss r ds(on) i d st W15NB50 st h15nb50fi 500 v 500 v <0.36 w < 0.36 w 14.6 a 10.5 a june 1998 1 2 3 to-247 isowatt218 1 2 3 1/9
thermal data to-247 isowatt218 r thj-case thermal resistance junction-case max 0.66 1.56 o c/w r t hj- amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 30 0.1 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 14.6 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 850 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 500 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c =125 o c 1 50 m a m a i gss gate-body leakage current (v ds =0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d = 7.5 a 0.33 0.36 w w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 14.6 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =7.5a 8 12 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 2600 330 40 3400 430 55 pf pf pf stW15NB50 - sth15nb50fi 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =250v i d =7.5a r g =4.7 w v gs =10v (see test circuit, figure 3) 24 14 34 20 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =400v i d =15a v gs =10v 60 15 27 80 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =400v i d =15a r g =4.7 w v gs =10v (see test circuit, figure 5) 15 25 35 20 33 47 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 14.6 58.4 a a v sd ( * ) forward on voltage i sd =15a v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15 a di/dt = 100 a/ m s v dd =100v t j =150 o c (see test circuit, figure 5) 680 9 26 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area for to-247 safe operating area for isowatt218 stW15NB50 - sth15nb50fi 3/9
thermal impedance for to-247 output characteristics transconductance thermal impedance for isowatt218 transfer characteristics static drain-source on resistance stW15NB50 - sth15nb50fi 4/9
gate charge vs gate-source voltage normalized gate threshold voltage vs temperature source-drain diode forward characteristics capacitance variations normalized on resistance vs temperature stW15NB50 - sth15nb50fi 5/9
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times stW15NB50 - sth15nb50fi 6/9
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.413 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 dia 3.55 3.65 0.140 0.144 p025p to-247 mechanical data stW15NB50 - sth15nb50fi 7/9
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.210 0.222 c 3.3 3.8 0.130 0.149 d 2.9 3.1 0.114 0.122 d1 1.88 2.08 0.074 0.081 e 0.75 1 0.029 0.039 f 1.05 1.25 0.041 0.049 g 10.8 11.2 0.425 0.441 h 15.8 16.2 0.622 0.637 l1 20.8 21.2 0.818 0.834 l2 19.1 19.9 0.752 0.783 l3 22.8 23.6 0.897 0.929 l4 40.5 42.5 1.594 1.673 l5 4.85 5.25 0.190 0.206 l6 20.25 20.75 0.797 0.817 m 3.5 3.7 0.137 0.145 n 2.1 2.3 0.082 0.090 u 4.6 0.181 l1 a c d e h g m f l6 123 u l5 l4 d1 n l3 l2 p025c isowatt218 mechanical data stW15NB50 - sth15nb50fi 8/9
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1998 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . stW15NB50 - sth15nb50fi 9/9
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